Special Issue: Diamond Thin Films. Recent Developments on CVD Diamond Growth.
نویسندگان
چکیده
منابع مشابه
Superconductivity in CVD diamond films.
A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and ...
متن کاملLaser Micro-Raman Spectroscopy of CVD Nanocrystalline Diamond Thin Film
Laser micro-Raman spectroscopy is an ideal tool for assessment and characterization of various types of carbon-based materials. Due to its special optical properties (CrN) coated stainless steel substrates. NCD films have been investigated by laser micro-Raman spectroscopy. The fingerprint of diamond based materials is in the spectral region of 1000-1600 cm-1 in the first order of Raman scatter...
متن کاملCell Growth on Different Types of Ultrananocrystalline Diamond Thin Films
Unique functional materials provide a platform as scaffolds for cell/tissue regeneration. Investigation of cell-materials' chemical and biological interactions will enable the application of more functional materials in the area of bioengineering, which provides a pathway to the novel treatment for patients who suffer from tissue/organ damage and face the limitation of donation sources. Many st...
متن کاملStudies on nucleation process in diamond CVD: an overview of recent developments
This paper presents an updated and systematic overview of the recent developments in studies on nucleation processes in diamond CVD. The nucleation mechanisms are discussed, and the nucleation enhancement methods developed to date are summarized. The effects of surface conditions and deposition parameters on the surface nucleation are described. Finally, a brief description of theoretical and m...
متن کاملElectrical characterization of CVD diamond thin films grown on silicon substrates
Diamond thin films grown on high resistivity, (100) oriented silicon substrates by the hot filament chemical vapor deposition (HFCVD) method have been characterized by four-point probe and current-voltage (through film) techniques. The resistivities of the as-grown, chemically etched and annealed samples lie in the range of 1 O* fl cm to 10’ 0 cm. The Raman measurements on these samples indicat...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: SHINKU
سال: 1994
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.37.553